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Dia 100 mm 4 inch Sapphire Substrate Wafer Single Side Polished
Specification
| Orientation | (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 |
| Diameter | 100mm ± 0.2mm |
| Thickness | 650um ± 20um / 850um ± 20um |
| Bow | <10 microns |
| Warp | <20 microns |
| TTV | <10 microns |
| Major Flat | M-axis +0.3°; 32+1mm |
| Minor Flat | None |
| Front Side | < 0.30nm |
| Back Side | <1.2 micron |
| Laser ID | marked on backside by major flat |
| Packaged | Cassette containing 25 wafers(s), Class 100 cleanroom envirnment |
Orientation: (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43
Diameter: 100mm ± 0.2mm
Thickness: 650um ± 20um / 850um ± 20um
Bow: <10 microns
Warp: <20 microns
TTV: <10 microns
Major Flat: M-axis +0.3°; 32+1mm
Minor Flat: None
Front Side: < 0.30nm
Back Side: <1.2 microns
Laser ID: marked on backside by major flat
Packaged: Cassette containing 25 wafers(s), Class 100 cleanroom envirnment
Process Flow
