Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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Sapphire substrate for blue and green LED components
Product Description
The materials used in blue and green light-emitting diodes are mainly GaN. Early GaN research has not made significant progress, mainly because it has been unable to find a substrate that matches the lattice constant of GaN, resulting in the density of defects in the epitaxial crystal. Too high, until 1991, Nichia Co. researcher S. Nakamura used low-temperature growth of an amorphous buffer layer of GaN on a c-axis sapphire substrate, and then grown it at high temperature to obtain the same mirror-like surface. For GaN, the problem of the epitaxial part has obtained a major breakthrough at this time.
At present, GaN components of high-brightness blue-green high-light-emitting diodes are mainly grown on Sapphire Wafer, the maximum size can reach 6 inches, and can provide different axial requirements including c, m, a, and r. In addition, to meet customer needs, other next-generation substrates have also been developed.
Technical Specification
Sapphire(Al2O3) Wafer
| Type | Orientation | Thickness(mm) | Diameter | +Z / -Z |
| Single Side Polished | c/a/m/r | 0.43/0.5/0.65 | 2”/4”/6” | Polished/Ground |
| Double Side Polished | c/a/m/r | 0.43/0.5/0.65 | 2”/4”/6” | Polished/Polished |
Sapphire flat sheet specifications
| 2" | 4" | 6" | ||||||||||
| Item | Target | Tolerance | Unit | Target | Tolerance | Unit | Target | Tolerance | Unit | |||
| Diameter : | 50.8 | ± | 0.1 | mm | 100 | ± | 0.1 | mm | 150 | ± | 0.2 | mm |
| Thickness : | 430 | ± | 15 | um | 650 | ± | 15 | um | 1300 | ± | 25 | um |
| Flat Length: | 16 | ± | 1 | mm | 30 | ± | 1 | mm | 47.5 | ± | 1 | mm |
| C-plane (0001) Off-set Angle (M-axis): | 0.2 | ± | 0.1 | degree | 0.2 | ± | 0.1 | degree | 0.2 | ± | 0.1 | degree |
| Flat Off-set Angle: | 0 | ± | 0.25 | degree | 0 | ± | 0.3 | degree | 0 | ± | 0.3 | degree |
| Bow: | -10 | ~ | 0 | um | -15 | ~ | 0 | um | -15 | ~ | 15 | um |
| Warp: | ≤ 15 | um | ≤ 20 | um | ≤ 30 | um | ||||||
| TTV: | ≤ 10 | um | ≤ 10 | um | ≤ 25 | um | ||||||
| LTV(5mm*5mm): | ≤ 2 | um | ≤ 2 | um | ≤ 2 | um | ||||||
| Front side Roughness: | ≤ 2 | Å | ≤ 2 | Å | ≤ 2 | Å | ||||||
| Back side Roughness: | 0.6 | ~ | 1.2 | um | 0.6 | ~ | 1.2 | um | 0.6 | ~ | 1.4 | um |
Product advantages
Pattern Sapphire Substrate (PSS): The sapphire substrate is designed to produce nano-scale specific regular microstructure patterns by growth or etching to control the output light form of the LED. At the same time, it can reduce the defects of the GaN grown on the sapphire substrate, improve the quality of the epitaxy, and improve the internal quantum efficiency of the LED and increase the light extraction efficiency.
It has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point (2045°C), etc.
