Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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6-inch sapphire substrate with good light transmittance
Product Description
The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.
Technical Specification
| Properties | Unit | 6 inch substrate |
| Diameter | mm | 150.1±0.1 |
| Flat Length | mm | 47.5±1 |
| Material | High Purity and Monocrystalline AL2O3 | |
| Surface Crystal Orientation | C-Plane 0°±0.1° | |
| Primary Flat Orientation | A-plane 0°±0.5° | |
| Broke Edge | ≤3mm | |
| Crack | No Cracking | |
| Defect | No Wrappage,Twin Crystal or Crystal Boundary | |
| EPD | ＜1000/cm² | |
Performance research
The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.
